铝酸锂衬底(LiAlO₂)

描述

苏州科跃 铝酸锂(LiAlO₂)衬底

苏州科跃提供高品质铝酸锂(LiAlO₂)衬底,因其与 GaN 晶体的晶格失配率较低,非常适合用于 GaN 薄膜的外延生长。这类衬底具有优异的热稳定性,广泛适用于先进半导体器件的制造与科研。

铝酸锂衬底物理性能

性能参数 数值
材料 LiAlO₂
晶体结构 M4
晶格常数 (Å) a = 5.17, c = 6.26
密度 (g/cm³) 2.62
熔点 1900°C
莫氏硬度 7.5

铝酸锂衬底规格

规格 参数
尺寸 10 × 3 mm、10 × 5 mm、10 × 10 mm、15 × 15 mm、20 × 15 mm、20 × 20 mm、直径 15 mm、直径 20 mm、直径 1″、直径 2″、直径 2.6″
厚度 0.5 mm、1.0 mm
晶向 <100>、<001>
抛光 单面抛光 (SSP) 或双面抛光 (DSP)
定向精度 ±0.5°
边缘倒角 2°(可选 1°)
晶体角度 可根据需求提供特殊尺寸与晶向
表面粗糙度 (Ra) ≤ 5 Å(5 μm × 5 μm)

选择苏州科跃铝酸锂衬底,为您的 GaN 薄膜应用及先进半导体制造提供卓越性能与精准规格,助力高性能器件的研发与生产。

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常见问题

Sputtering targets are materials used in thin-film deposition processes to create coatings on substrates. They are used in industries like semiconductors, optics, photovoltaics, and electronics.

Evaporation materials are used in Physical Vapor Deposition (PVD) processes, where materials are heated and evaporated to form a thin film on a substrate. These are critical for applications in optics, wear protection, and decorative coatings.

Boat crucibles are used as containers for evaporation materials during PVD processes. They help to uniformly evaporate materials onto the substrate for thin film formation.

Sputtering uses energetic particles to eject material from a target, while evaporation involves heating a material until it vaporizes and deposits on a substrate. Both are common methods in Physical Vapor Deposition (PVD) for creating thin films.

Consider the material composition, purity, target size, and application-specific requirements such as the thickness and uniformity of the film.

Yes, we offer customized sputtering targets, evaporation materials, and crucibles to meet specific customer requirements for size, material composition, and purity.

Yes, we can assist in selecting the most suitable material based on your application, whether it’s for optical coatings, semiconductor fabrication, or decorative finishes.

Yes, we offer both bulk and small quantities of sputtering targets, evaporation materials, and spherical powders to support research, prototyping, and development projects.